Abstract
We fabricated all-epitaxial Ba0.5Sr0.5TiO3 (BST) (111)/β-Ga2O3 (−201) thin films on GaN (002)/Al2O3 (001) substrates by pulsed laser deposition. BST films with different textures were obtained by depositing β-Ga2O3 buffer layers on GaN substrates under varied deposition conditions. The results for dielectric constant, tunability, and dielectric loss of the BST/Ga2O3/GaN and BST/GaN layers at an applied voltage of 20V, were 225 and 199, 20% and 14%, and 0.006 and 0.018, respectively. The epitaxial growth of the BST film and enhancement of the dielectric properties of the BST/Ga2O3/GaN heterostructure were achieved in the presence of an epitaxial Ga2O3 buffer layer.
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