Abstract
ABSTRACT Cu-doped Ba0.7Sr0.3TiO3 (BST) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a sol-gel spin coating process. The coated thin films were annealed at 750°C for 3 min in oxygen, air and nitrogen atmospheres by a rapid thermal annealing process. All of the Cu-doped BST thin films were consisted of a single phase perovskite structure and exhibited smooth crack-free surfaces. We investigated the effects of the annealing atmosphere on the microstructure and the electrical properties of the Cu-doped BST films. The Cu-doped BST film by annealing in oxygen exhibits a dielectric constant of 923 with electric field dependent tunability of 48.6% at electric field 250 kV/cm and a leakage current density of 1.82 × 10− 5A/cm2 at electric field of 150 kV/cm.
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