Abstract
The amplification and propagation properties of transverse electric (TE) phonon polaritons in a two-hexagonal boron nitride (hBN)-layer structure are investigated theoretically. The excitation of TE phonon polaritons with strong confinement in the two-hBN-layer structure is investigated numerically. We found that in the two-hBN-layer structure, a nearly perfect absorption exists, which originates from the excitation of the TE phonon polaritons with high effective index. When the incident angle is near the absorption angle, we found that a large photonic spin Hall effect of the reflected beam exists owing to the sharp decrease in Fresnel reflective coefficients around the perfect absorption.
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