Abstract
We report the effect of Bi and Te doping on the electrical transport and thermoelectric properties of Cu3SbSe4 with an aim to maximize the power factor and/or minimize the thermal conductivity. A series of Cu3Sb1-xBixSe4-yTey (x = 0, 0.02, 0.04, 0.06, 0.08; y = 0.01) samples were prepared by melt growth technique and ball milling followed by spark plasma sintering. The structural analysis and microstructures were carried out by X-ray diffraction, transmission electron microscopy and Field emission scanning electron microscopy. Electrical resistivity is found to decrease with increase in doping contents, which is due to increase in carrier concentration and formation of acceptor level inside the energy gap. Reduction in thermal conductivity with increase in Bi content is attributed to scattering of phonons through grain boundaries and mass fluctuation. Maximum figure of merit (ZT ∼ 0.76) was achieved in the Cu3Sb0.98Bi0.02Se3.99Te0.01 sample at 650 K, which is approximately twice of the Cu3SbSe4. The results reveal that the Bi and Te doped Cu3SbSe4 leads to remarkable improvement in its thermoelectric properties.
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