Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin‐Film Bilayered Heterostructures

Abstract

AbstractModulation doping is one of the strategies to improve thermoelectric power factors of nanocomposites and thin‐film bilayered heterostructures by effectively increasing electrical conductivity. Here, it is reported that thin‐film heterostructures of heavily doped p‐type organic conducting polymer, poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and undoped thin‐film Ge can enhance thermoelectric power factor by modulation doping. The maximum power factor and Seebeck coefficient of the bilayered heterostructures are 154 µW m−1 K−2 and 398 µV K−1, respectively, corresponding to 47‐fold and 41‐fold increases compared to those of bulk PEDOT:PSS and 64‐fold increase compared to power factor of undoped Ge. The enhancements in power factor and Seebeck coefficient are quantitatively described by the hole transfer from PEDOT:PSS to Ge, which takes into account the band alignment at the interface detected by Kraut's method. Agreement between the simulation and experiment results also implies predictability of thermoelectric performances of nanoscale bilayered heterostructures in general, when band offset, Fermi level, and individual electronic properties are available. This work can be further extended to predict performance of other nanoscale combinations of thermoelectric and other electronic materials in general.