Abstract
Based on the resonant level concept, we presented an analytic calculation for the enhancement of the thermoelectric properties of semiconductor materials with element doping. We show that the power factor can be significantly enhanced due to a resonant energy level introduced by some element lies in the host bands and near the Fermi level and band edge. Our calculations reveal that by choosing optimal parameters for the element doping, such as impurity level, and doping concentration, one can obtain an optimum power factor for improved thermoelectric performance.
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