Abstract
Thermoelectric performances of thin films are affected by both the morphology and composition of the films. On one hand, the compact morphology of films could increase electrical conductivity via boosting carrier mobility. On the other hand, for semimetal or semiconductor materials, alloying is an effective means to adjust the carrier concentration and band structure and further modulate thermoelectric performances. In this work, with an in-situ high-vacuum annealing technique, we prepared compact Bi1-xSbx thin films via magnetron sputtering and further modulated their power factor by varying Sb content. Thermoelectric transport measurements revealed an enhanced room-temperature power factor up to 23.48 μW/(cmK2) in compact Bi0.95Sb0.05 film with high carrier mobility. Our simulation results based on a tight-binding model, in conjunction with the experimentally observed mobility peak, suggest that the observation of enhanced thermoelectric power factor is possibly related to the composition-induced band structure modulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
