Abstract
We report the enhancement of thermoelectric properties in p-type SnSe by the addition of layered MoS2/graphene (MoS2/G). Highly oriented SnSe+MoS2/G (xwt%, x=0, 0.2, 0.4, 0.8, 1.6 and 3.2) composites have been synthesized by rapid induction melting followed by rapid hot pressing. It is found that the addition of MoS2/G can enhance the maximal power factor from ∼1.83μWcm−1K−2 for pristine SnSe to ∼4.68μWcm−1K−2 for a SnSe+3.2wt% MoS2/G sample. Moreover, the layered MoS2/G also contributes to a low lattice thermal conductivity due to phonons scattering at grain boundaries. A maximum ZT of 0.98 is achieved in the SnSe+3.2wt% MoS2/G sample at 810K. Our results provide a possible strategy to enhance the thermoelectric performance of SnSe.
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