Abstract
AbstractN‐type Mg3.2Sb1.5Bi0.5 materials are prepared by cation‐site doping with lanthanides (La, Ce). Both La‐ and Ce‐doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)‐doped n‐type Mg3.2Sb1.5Bi0.5 samples. High electron carrier concentration ≈9 × 1019 cm−3 is obtained in Mg3.18La0.02Sb1.5Bi0.5 and Mg3.185Ce0.015Sb1.5Bi0.5, which is close to the theoretical doping‐concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide‐doped Mg3.2Sb1.5Bi0.5. The highest ZT value ≈1.6 is achieved in Mg3.19La0.01Sb1.5Bi0.5 at 693 K, along with a ZT ≈1.50 in Mg3.19Ce0.01Sb1.5Bi0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg3.2Sb1.5Bi0.5‐based materials.
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