Abstract
AbstractFar‐red (FR) and near‐infrared (NIR) spectroscopy technologies have attracted extensive attention. How to obtain luminescent materials suitable to FR‐NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) is a crucial challenge. Herein, a Si3N4‐substitution strategy is employed to regulate the luminescence of Gd3Ga5O12:Cr3+ (GGG:Cr3+) phosphors. The bandwidth of GGG:Cr3+ is 95 nm, and then it is broadened to 116 nm due to the Si3N4‐substitution. Furthermore, at 423 K the thermal stability is enhanced to 98.7% of that at room temperature, which is higher than the reported 92.7%@423 K for the Si3N4‐free sample. The intensity of the optimal specimen is elevated 2.9 times compared with the Si3N4‐free sample sintered at the same condition. The FR pc‐LED is manufactured by using the optimized sample, and its FR output power is 47.1 mW with a conversion efficiency of 15.9% driven by 100 mA. This work paves a new way to design high‐performance NIR phosphors.
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