Abstract
We investigated the thermal properties of quantum-dot light-emitting diodes (QLEDs) using composition-gradient thick-shell CdSe@ZnS/ZnS QDs. Thick-shell QDs with low defective structures effectively prevented electron–hole pairs from nonradiative Auger recombination. More specifically, defects were prevented from thermal-stress-induced expansion at elevated temperatures and high driving currents. Consequently, 97% of EL remained after the device was thermally stressed at temperatures higher than 110 °C, indicating that the nanostructure design of QDs is an important factor for high-performance QLEDs.
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