Abstract

AbstractThe intrinsic thermal conductivity coefficient of polyarylene ether nitrile (PEN) is low, which brings difficulty in meeting the need of advanced electronic equipment and microelectronic integrated circuit. In this research, h‐BN was mixed into PEN as fillers in view of its remarkable thermal conductivity and electrical insulation, and the influence of filler content on properties in many aspects was studied in depth. The microcosmic arrangement and interfacial compatibility between fillers and matrix were studied by SEM. AR, DSC, TGA and hot‐disk methods were performed to analyze thermal property. The results confirmed that thermal conductivity of composites was increased to 0.5444 Wm−1 K−1 at 30 wt% filler content, having 22.89% increment compared with PEN copolymer without addictive. Moreover, this PEN/h‐BN composite shows excellent thermal properties with Tg of 214.83°C, and T5% of 535.09°C. Furthermore, the dielectric constant and insulation performance of composite with 30 wt% h‐BN are improved, while the dielectric loss is kept low of 0.02 at 1 kHz. The tensile strength is 62.3 MPa and elastic modulus is 3567.5 MPa. In a whole, the 30 wt% h‐BN/PEN composite prepared in this work exhibit great potentiality and promising prospect in the field of electronics.

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