Abstract
The structure, morphology and dielectric properties of the oxygen annealed (O2-annealed) and untreated (as-prepared) 0.85(K0.5Na0.5) NbO3-0·15SrZrO3 (KNN-15SZ) ceramics were investigated. The temperature dependence of dielectric permittivity shows two diffuse dielectric peaks associated with duplex core-shell structure, leading to relatively stable dielectric permittivity in a wide temperature range. Interestingly, the O2-annealed sample with the operating temperature range of −104 °C–157 °C could meet the EIA X8R specification, which is superior to the as-prepared one (−98 °C–130 °C) for the EIA X7R specification. Furthermore, the dielectric contribution from cores and shells of both samples was divided by the Lorentz fitting. The relation between relaxation frequency and temperature of both samples obeyed the Vogel-Fulcher law. This finding could pave a possible way to modify dielectric temperature stability for multilayer ceramic chip capacitors applications.
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