Abstract
YBa2Cu3O7-δ/BaZrO3 (YBCO/BZO) composite film with enhanced flux-pinning performance was prepared on LaAlO3 (LAO) substrate via a fluorine-free sol-gel method in combination with a novel photosensitive sol-gel lithography technique. Owing to the difference of lattice mismatch between the interfaces of YBCO/LAO and YBCO/BZO, high-density stacking faults were successfully introduced into YBCO matrix, which has been confirmed by XRD and HRTEM analysis. Magnetization measurement results indicate that YBCO/BZO composite film has a stronger current-carrying capacity than the pure YBCO film especially under applied magnetic fields. However, the critical current density of YBCO/CeO2 composite film is much lower than that of the pure YBCO film at all the applied magnetic fields due to the chemical reaction between YBCO and CeO2. Therefore, it can be concluded that the flux-pinning performance of YBCO film can be improved by the lattice distortions within YBCO matrix as long as the metal oxide microarrays cannot react with YBCO films.
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