Abstract
ITO/WOx/TaN and ITO/WOx/AlOx/TaN memory cells were fabricated as a neuromorphic device that is compatible with CMOS. They are suitable for the information age, which requires a large amount of data as next-generation memory. The device with a thin AlOx layer deposited by atomic layer deposition (ALD) has different electrical characteristics from the device without an AlOx layer. The low current is achieved by inserting an ultra-thin AlOx layer between the switching layer and the bottom electrode due to the tunneling barrier effect. Moreover, the short-term memory characteristics in bilayer devices are enhanced. The WOx/AlOx device returns to the HRS without a separate reset process or energy consumption. The amount of gradual current reduction could be controlled by interval time. In addition, it is possible to maintain LRS for a longer time by forming it to implement long-term memory.
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