Abstract
β-Ga2O3 is a potential fast semiconductor scintillator with no significant self-absorption and excellent stability. However, the relatively low light yield of β-Ga2O3 at room temperature limits its practical application. In order to improve its scintillation performance, Al3+ doped β-Ga2O3 single crystals are investigated. By doping 5%Al3+ (atomic concentration), the light yield of β-Ga2O3 is increased from 4394 to 6816 ph/MeV. The increased light yield may be attributed to the decreased free electron concentration and inhibition of Auger nonradiative recombination. The thermal quenching effect can also be moderated by the increase in the thermal activation energy induced by Al3+ doping. The results indicate that Al3+ doping is an effective method to increase the light yield of β-Ga2O3.
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