Abstract
AbstractThe usefulness of scanning ion microprobe (SIM) image analysis by a gallium focused ion beam (FIB) on a bevelled sample surface is investigated. To improve the low secondary ionization yields of elements caused by the gallium bombardment, the oxygen ions for the positive ion detection and the caesium ions for the negative ion detection were in‐situ implanted with a dose of 1016–1017 atoms/cm2 prior to imaging analysis. A significant enhancement of ion image sensitivity in the ion‐implanted area compared with that in the non‐implanted area was observed. The enhanced SIM image analysis for the highly magnified bevel is especially useful for multilayered structures with rough surfaces. That is because the secondary ion mass spectrometry (SIMS) depth profiles for the rough surface samples do not give accurate depth information due to the significant distortion and degradation of the profiles caused by uneven etching. This technique can be an alternative to the SIMS depth profiling for rough surface samples. Copyright © 2004 John Wiley & Sons, Ltd.
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