Abstract
We have monitored the room temperature oxidation of GaAs(100) with NO 2 using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). We report a relatively high dissociative sticking probability (∼ 5%) for NO 2 on GaAs(100) at room temperature (compared to that of O 2), as was also observed in earlier studies of NO 2 oxidation of GaAs(110). We have measured the oxygen coverage as a function of exposure and initial As/Ga composition of the clean (100) surface. We find that both the sputtered (nearly stoichiometric) and the Ga-rich surfaces are oxidized somewhat more effectively than the annealed stoichiometric surface. The initial dissociative sticking probability for NO 2 at room temperature for both the (100) and (110) surfaces is very much greater than that of other molecular sources of oxygen, i.e., N 2O, NO, and O 2.
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