Abstract
We have monitored the room temperature oxidation of GaAs(100) with NO 2 using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). We report a relatively high dissociative sticking probability (∼ 5%) for NO 2 on GaAs(100) at room temperature (compared to that of O 2), as was also observed in earlier studies of NO 2 oxidation of GaAs(110). We have measured the oxygen coverage as a function of exposure and initial As/Ga composition of the clean (100) surface. We find that both the sputtered (nearly stoichiometric) and the Ga-rich surfaces are oxidized somewhat more effectively than the annealed stoichiometric surface. The initial dissociative sticking probability for NO 2 at room temperature for both the (100) and (110) surfaces is very much greater than that of other molecular sources of oxygen, i.e., N 2O, NO, and O 2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.