Abstract
CsPbBr3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.
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