Abstract
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained using a Ti nanolayer to form a W/TiOx/TaOx/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaOx/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm2 is observed by transmission electron microscopy. The presence of oxygen-deficient TaOx nanofilament in a W/TiOx/TaOx/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaOx interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.2.
Highlights
Resistive switching random access memories (RRAM) with simple metal-insulator-metal stacks are under intensive investigation owing to their great promise for use in next-generation memory applications [1,2,3,4,5]
It is obvious that the switching material on the sidewall is not necessary for switching properties of the RRAM devices because the electrons will find least path to move from top electrode (TE) to bottom electrode (BE)
This is due to the trail effect and surface roughness of W BE, as we can see from the depth of 57 to 65 nm of the 184 W depth profile
Summary
Resistive switching random access memories (RRAM) with simple metal-insulator-metal stacks are under intensive investigation owing to their great promise for use in next-generation memory applications [1,2,3,4,5]. Their nonuniformity in switching, low yield, and unclear switching mechanism hinder their practical realization. RRAM devices with simple composition, easy fabrication process, and good 3D integration compatibility will be needed in the future Methods such as doping, formation polarity control, bottom electrode modification, nanocrystal insertion, and interfacial engineering have recently been investigated to improve the characteristics of resistive switching memory [6,7,8,9,10]. The device can be operated with a small ‘RESET’ current of 23 μA
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