Abstract
In this letter, NH<sub>3</sub> plasma treatment was utilized to improve the ferroelectric property of widely used TiN/Hf<sub>x</sub>Zr<sub>y</sub>O<sub>2</sub>(HZO)/TiN capacitors. The developed metal-ferroelectric-metal (MFM) structure shows high remnant polarization (P<sub>r</sub>) of <inline-formula> <tex-math notation="LaTeX">$30 ~\mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> after 10-min NH<sub>3</sub> treatment at bottom TiN electrode. Materials characterization were subject to investigate the behind mechanism. A higher ferroelectric o-phase formation in NH<sub>3</sub>-treated HZO device is revealed by grazing incidence X-ray diffraction (GIXRD). In addition, the high-resolution transmission electron microscopy (HRTEM) indicates that the NH<sub>3</sub> treatment optimizes the interface quality by restraining of the interfacial layer (IL) including intrinsic TiO<sub>x</sub>N<sub>y</sub> dead-layer and non-ferroelectric layer. Furthermore, the improved interface engineering also suppressed the imprint effect, which prompts the retention improvement of TiN/Hf<sub>x</sub>Zr<sub>y</sub>O<sub>2</sub>/TiN ferroelectric capacitors.
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