Abstract
Strong red light emission from silicon oxynitride-based (SiOxNy-based) light-emitting diodes (LEDs) was investigated. The introduction of dense Si quantum dots (Si QDs) into SiOxNy not only increases carrier injection efficiency but also results in a significant enhancement of more than 300% in the light emission efficiency compared with SiOxNy-based LEDs without Si QDs. Moreover, the efficiency droop phenomenon is remarkably suppressed in the SiOxNy-based LED containing dense Si QDs. Analysis of the dominant recombination process indicates that the improved performance of the SiOxNy-based LEDs results from the increased bimolecular radiative recombination probability.
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