Abstract
A two-step channel In0.1Ga0.9As/In0.25Ga0.75As heterostructure real-space transfer transistor grown by low-pressure metalorgonic chemical vapor deposition is implemented. By virtue of δ doping, shallow ohmic contacts and two-step channel, a high peak-to-valley current ratio up to 260 000 at 300 K can be obtained at low collector voltage (Vc=3 V). Moreover, from Shubnikov–de Haas (SdH) measurements, we observe a positive persistent-photoconductivity effect and variations of quantum lifetime. The SdH result is in good agreement with the critical drained-to-source onset voltage of negative differential resistance.
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