Abstract
Radiation-induced absorption (RIA) is investigated at $ \lambda = {1.55}~ \mu \text{m}$ in technologically improved pure-silica-core (PSC) PANDAs, in which we minimized drawing-induced silica network strain. The results of the steady-state $\gamma $ - and pulsed-X-ray irradiations are compared with those obtained earlier on former, non-optimized PSC PANDAs. It is found that the technological improvements have resulted in nearly complete suppression of the most deleterious RIA band at ~1 eV to drastically improve the radiation resistance of the PSC PANDAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
