Abstract
The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant.
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