Abstract
We report a study of proton irradiation effects on the luminescence of self-assembled InAs quantum dots (QDs) embedded in an AlAs/GaAs short-period superlattice structure. As opposed to the QDs grown in a GaAs thin film, the QDs embedded in an AlAs/GaAs superlattice structure were found to exhibit much higher photoluminescence (PL) degradation resistance to proton irradiation. For example, at the highest dose (10 14 cm −2) used in this work, the PL intensity from the QDs in superlattice dropped by a factor of ∼4, while the PL intensity from the QDs in GaAs decreased by almost two orders of magnitude, relative to their respective as-grown samples. Effects of thermal annealing on the luminescence of irradiated QDs were also examined. Possible mechanisms leading to the enhanced PL radiation hardness for QDs in superlattice are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.