Abstract
The influence of excimer-laser-assisted surface processing on quantum-well photoluminescence (QW PL) has been investigated in InGaAs/InGaAsP heterostructures capped with a thin layer of In0.53Ga0.47As. The PL mapping measurements carried out on samples before they were processed in a rapid thermal annealer indicated no significant differences in the QW PL signal intensity measured at the excimer-laser-processed sites and in their vicinity. However, a large difference in the QW PL signal, with its intensity significantly enhanced at the laser-processed sites, was observed after 10 s of rapid thermal annealing (RTA) at 750 °C. The largest contrast in the PL signal (an intensity difference up to about 100%) was obtained for a site processed with 50 pulses and a laser fluence of 123 mJ/cm2. The changes in the QW PL signal intensity have been found to coincide with the changes in the surface chemical composition that were detected with Auger electron spectroscopy. The main difference concerns the development of a GaOx layer on the laser-processed In0.53Ga0.47As surface.
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