Abstract

ABSTRACTThe step-coverage and gap-filling characteristics of SiO2 films deposited by TEOS based plasma CVD and Thermal CVD processes on AlX and Cu/X metallizations were studied. It was found that the conformality of the films, in the case of plasma CVD, is influenced by the relative flow rates of TEOS to oxygen. The suitability of the two types of SiO2 films for filling gaps of different aspect ratios on AlX and Cu/X metallizations with different aspect ratios was examined. The results are discussed and correlated with the other important characteristics of these SiO2 films.

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