Abstract
An empirical large-signal model for a high-power AlGaN/GaN metal–insulator–semiconductor HEMT (GaN MISHEMT) utilising improved drain current (I–V) and gate charge (Q–V) formulation is presented. The proposed modelling equations accurately model the asymmetric bell-shaped transconductance (Gm) and gate capacitance (C11) characteristics over a wide bias range of operation. The simulation results of RF large-signal harmonic power levels and two-tone intermodulation distortion products show excellent agreement with the measured data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
