Abstract
The rectification of terahertz radiation in a periodically almost-depleted graphene structures with dual grating gate is studied. Plasmonic electron-hole ratchet based rectified current grows with decreasing the Fermi energy of charge carriers in the gated parts of graphene. It is shown that the charge carriers accumulated at boundaries of depleted parts of graphene enhance the magnitude and inhomogeneity of oscillating electric field of the plasmon, which leads to significant growth in the rectification efficiency. Interaction of plasmon modes in different gated parts of graphene can increase the rectification efficiency due to excitation of the hybrid plasmon modes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Solid-State Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
