Abstract

The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.

Highlights

  • In recent years, Ba1-x Srx TiO3 (BSTO) films have been employed for the development of various multifunctional devices, such as microwave filters, piezoelectric sensors, access memory, and integrated circuits and microelectromechanical systems (MEMS) [1,2,3,4]

  • The piezoelectric and ferroelectric characteristics of the BSTO composition thin film were examined by piezoresponse force microscope (PFM)

  • We revealed that the first four regions of BSTO composition thin film were in the ferroelectric phase at room temperature

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Summary

Introduction

Ba1-x Srx TiO3 (BSTO) films have been employed for the development of various multifunctional devices, such as microwave filters, piezoelectric sensors, access memory, and integrated circuits and microelectromechanical systems (MEMS) [1,2,3,4] Not surprisingly, all these developments are dependent on a good fundamental understanding of the BSTO; as is known, the tunable competition of local lattice symmetry via the crystal field is extremely influenced by the Sr doping in BaTiO3 (BTO) [5,6,7]. We have successfully fabricated continuous composition-spread ultrathin films and studied how the substitution affected the piezoelectric characteristics and dielectric properties of the BSTO thin film. Our investigation provides correlations between components, structures, and properties, and can be used for future material design

Experimental Details
Schematic diagram of fabricating the the composition-spread
Ferroelectric properties of the different contentBSTO
Conclusions
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