Abstract
Excess Bi was added to 0.7Bi1+xFeO3-0.3BaTiO3 (B1+xF-0.3BT; x = 0.00–0.05) ceramics to compensate for the volatilization of Bi2O3 during sintering. The domain structure and the domain switching of the B1+xF-0.3BT ceramics were systematically studied by the characterization of electrical properties and the use of piezoresponse force microscopy (PFM) and transmission electron microscopy (TEM). XRD patterns showed that the phase structure of all of the ceramics was in the morphotropic phase boundary (MPB), consisting of rhombohedral and pseudocubic phases. Appropriate compensation with Bi content can promote domain switching due to the precise control of MPB, which plays a vital role in obtaining high piezoelectric properties. Therefore, the outstanding piezoelectric properties of d33 = 214 pC/N, TC = 528 °C, kp = 0.325 and Sp-p = 0.375% were obtained in B1.02F-0.3BT ceramics, the properties of which are superior to those obtained in previously reported studies of BF-BT based ceramics. The present investigation of the compensating Bi content will inspire further research to develop BF-BT based ceramics suitable for practical use.
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