Abstract

TiO2 is one of the most widely explored materials as an electron transport layer (ETL) in dye sensitized solar cells (DSSCs) due to its excellent physical and chemical properties. However, recombination at the device's interface slackens the charge carrier movement, adversely affecting their device performance. Rapid extraction of photogenerated charge carriers plays a vital role in developing high efficiency DSSCs. The conduction band alignment of TiO2 ETL and N719 dye light absorber plays a crucial role in charge carrier dynamics of DSSCs. Herein, the band structure of TiO2 ETL is finely tuned by the incorporation of cesium bromide (CsBr). At the optimal concentration (0.4 Wt. %), DSSCs achieved the best power conversion efficiency (PCE) of 9.28 % compared to 7.61 % for pristine TiO2. The modified TiO2–CsBr ETL induced a negative shift in flat band potential (Vfb) from −0.46 to −0.50 V, which improved the open circuit voltage (VOC), its work function (ɸ) from −4.71 to −3.75 eV and increased conduction band minimum (CBM) from −3.58 to −2.42 eV. CsBr incorporation increased electron density in TiO2 matrix, indicating the suppression of trap state and significantly improved the overall photovoltaic performance of DSSCs.

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