Abstract
Combining layered MoS2 flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality heterojunction devices by harnessing the advantages of both materials. Here, we present a pressure-modulated heterojunction photodiode that is composed of an n-type multilayer MoS2 and a p-type GaN film via the piezo-phototronic effect. Under the illumination of 365 nm incident light, a strong photoresponse is observed with response and recovery times of ~66 and 74 ms, respectively. Under a pressure of 258 MPa, the photoresponsivity of this photodiode can be tuned by the piezo-phototronic effect arising from the GaN film to ~3.5 times. Because of the lowered junction barrier with an applied external pressure (strain), more photogenerated carriers can successfully pass through the junction area without recombination, which results in an enhancement effect. This work provides a possible path for the implementation of high-performance electronic and optoelectronic devices that are based on hybrid heterostructures via human interfacing.
Highlights
Thin films of MoS2 have been demonstrated as a unique channel material for field-effect transistors because of their high electron mobility, excellent current ON/OFF ratio and low subthreshold swing.[3,4,6]
As an ideal photoactive semiconductor, MoS2 flakes that are based on optoelectronic nanodevices have been successively developed for use in photovoltaics,[7,8] LEDs,[9,10] and photodetectors.[11,12]
We present a vertically stacked heterojunction diode that consists of n-type multilayer MoS2 and p-type GaN films
Summary
Molybdenum disulfide (MoS2), a layered semiconductor from the family of transition metal dichalcogenides, has attracted considerable attention for the study of fundamental physics and high-performance nanodevices in ultrathin structures.[1,2,3,4] Semiconducting MoS2 possesses a tunable bandgap that experiences transitions from a direct bandgap (~1.85 eV) in a monolayer to an indirect bandgap (~1.2 eV) in bulk films.[1,5] Atomically thin films of MoS2 have been demonstrated as a unique channel material for field-effect transistors because of their high electron mobility, excellent current ON/OFF ratio and low subthreshold swing.[3,4,6] As an ideal photoactive semiconductor, MoS2 flakes that are based on optoelectronic nanodevices have been successively developed for use in photovoltaics,[7,8] LEDs,[9,10] and photodetectors.[11,12]The p-n heterojunction, in which two different types of doped semiconductors are sequentially stacked together, acts as fundamental building block for modern electronics and optoelectronics. To explore new observations and functionality, significant effort has been applied to construct ultrathin heterojunctions using MoS2 flakes, including MoS2-WSe2,13,14 MoS2-carbon nanotubes,[15] and MoS2-WS2.16,17 In addition, combining layered MoS2 flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality p-n heterojunctions by harnessing the advantages of both materials. Six-layered MoS2 flakes and ZnO film-based p-n heterojunction diodes present a large forward-to-reverse current ratio (3.4 × 104)
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