Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition

Abstract

High-quality CsPbBr3 thin films have been fabricated by pulse laser deposition (PLD) technique and severed as an interlayer for n-ZnO/p-GaN heterojunction ultraviolet (UV) photodetector. The self-powered photodetectors based on n-ZnO/CsPbBr3/p-GaN heterojunction exhibited a high peak responsivity of 44.53 mA/W and detectivity of 2.03✕1012 cm·Hz1/2W−1 under zero bias voltage, which has increased ∼30 and ∼178 times than that of the n-ZnO/p-GaN device, respectively. Meanwhile, the photodetector with excellent stable and reproducible characteristics were also demonstrated and the photoresponse time has been drastically shortened by inserting the CsPbBr3 interlayer. The key role of the CsPbBr3 interlayer, as a carrier transport layer, has been demonstrated by the energy-band diagram. The enhanced performances of n-ZnO/p-GaN heterojunction make them promising application in self-powered photodetectors.