Abstract

High-performance photodetectors play crucial roles as an essential tool in many fields of science and technology, such as photonics, imaging, spectroscopy, and data communications. Demands for desired efficiency and low-cost new photodetectors through facile manufacturing methods have become a long-standing challenge. We used a simple successive ionic layer adsorption and reaction (SILAR) method to synthesize CdS, CdSe, and PbS nanoparticles directly grown on WSe2 crystalline flakes. In addition to the excellent wavelength selectivity for (30 nm) CdS, (30 nm) CdSe, and (6 nm) PbS/WSe2 heterostructures, the hybrid devices presented an efficient photodetector with a photoresponsivity of 48.72 A/W, a quantum efficiency of 71%, and a response time of 2.5–3.5 ms. Considering the energy band bending structure and numerical simulation data, the electric field distribution at interfaces and photocarrier generation/recombination rates have been studied. The introduced fabrication strategy is fully compatible with the semiconductor industry process, and it can be used as a novel method for fabricating wavelength-tunable and high-performance photodetectors toward innovative optoelectronic applications.

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