Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers

Abstract

The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on thermally decomposed GaP. The effects of the doping level and rapid thermal annealing of n+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region.