Abstract
The glancing angle deposition technique has been employed to synthesize SiOx-TiO2 heterostructure nanowire (NW) arrays on indium tin oxide (ITO) coated glass substrate. A field emission gun scanning electron microscopic image shows that the average diameter of the NWs is ∼50 nm. Transmission electron microscopy images show the formation of heterostructure NWs, which consist of ∼180 nm SiOx and ∼210 nm long TiO2. The selected-area electron diffraction shows the amorphous nature of the synthesized NWs, which was also confirmed by X-ray diffraction method. The main band absorption edges at 3.5 eV were found for both the SiOx-TiO2 and TiO2 NW arrays on ITO coated glass plate from optical absorption measurement. Ti3+ defect related sub-band gap transition at 2.5 eV was observed for TiO2 NWs, whereas heterostructure NWs revealed the SiOx optical band gap related transition at ∼2.2 eV. Two fold improved photon absorption as well as five times photoluminescence emission enhancement were observed for the SiOx-TiO2 multilayer NWs compared to TiO2 NWs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
