Abstract
Vertically aligned ZnO nanowires were developed on Pt coated Si-wafer by chemical vapor deposition. ZnO nanowires demonstrate maximum photocurrent density of 1.47 mA/cm2, and water splitting efficiency of 0.34% under the light illumination. Therefore, ZnO nanowires developed on the Pt coated Si-wafer could be an excellent photoelectrode for solar energy related applications.
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