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Abstract
The anatase TiO2 films with controllable {001} highly reactive facets were fabricated on {001}SrTiO3 substrate with various total work pressure (TWP) by direct current facing-target magnetron sputtering (DCFTMS). X-ray diffraction (XRD), scanning electron microscopy (SEM), surface roughness tester (SRT), and X-ray photoelectron spectroscopy (XPS) were employed to confirmed the influence of different TWPs on the interface of TiO2/SrTiO3 heterostructured with epitaxial preferred growth of the anatase {001}TiO2 facet. The mechanisms of enhanced photoelectrochemical properties were explored by transient photocurrent (TP), current–potential (I–V), cyclic voltammetry (CV), polarization (Tafel), electrochemical impedance spectroscopy (EIS), and Mott–Schottky (M–S) curves, which can be ascribed to the formation of high-quality heterojunction between {001}TiO2 thin film and {001}SrTiO3 substrate, which suppress the recombination of photogenerated electron–hole pairs effectively.
Published Version
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