Abstract
Vertically stacked PEDOT: PSS/PbS/CsPbCl3 phototransistors were fabricated by a low-temperature solution method, the electrical and optoelectrical properties were investaged. The photodetectors based on PEDOT: PSS/PbS/CsPbCl3 phototransistors exhibited a high responsivity of 147.35 A/W, detectivity of 6.77 × 1012 Jones, and signal-to-noise ratio of 102 under a relatively low external bias. The results indicate vertically stacked PEDOT: PSS/PbS/CsPbCl3 architecture is a promising candidate for high-performance broadband photodetection and portable low-voltage optoelectronic devices.
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