Enhanced Photocurrents in the Vertically Aligned Hybrid CdTe-Si One-Dimensional Nanostructures with High Surface Area

Abstract

One-dimensional hybrid CdTe nanostructures on Si nanowires in a wafer batch were synthesized by wet chemical processes. Si nanowires were vertically aligned by the employment of Ag nanoparticles as a catalyst of an electroless etching. The etched Si nanowires were utilized as sacrificial materials for the galvanic displacement reaction to Te nanostructures. The hybrid CdTe on Si nanostructures were created by the wet chemical reaction of the Te nanostructures prepared on aligned Si nanowires. The electrical and optical properties of the fabricated hybrid CdTe-Si nanostructures were characterized. Especially, the one-dimensional hybrid CdTe-Si nanostructures with high surface area demonstrated the enhanced optical current densities. The vertically aligned one-dimensional hybrid CdTe-Si nanostructures can propose an efficient route for the synthesis of hybrid hierarchical nanostructures with high electrical and optical properties in a wafer batch.