Abstract
Thin films of intrinsic, N-doped and N/Al co-doped ZnO were prepared by a sol–gel deposition process. The effect of doping on structure, optoelectronics and photocatalytic properties of ZnO were studied. It was found that the doping process reduces the commonly observed wrinkled effect. XRD pattern measurements confirmed that all the films preferentially grow in the c-axis orientation, with degradation in crystallinity in doped films. The dopant created defect can be also observed in the PL spectra and UV–vis measurements of the NZO and NAZO thin film, with reduced band gap in doped films. Photocatalytic measurements confirm that the N and N/Al dopant process enhances photocatalytic degradation of MB by narrowing the band gap.
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