Abstract
Fenton photocatalyst constructed by transition metal-doped semiconductor material seems to be a promising alternative to classic Fenton catalysts. A series of Cu-doped tubular Bi12O17Cl2 with sufficient oxygen vacancies (ov) was successfully prepared through a hydrothermal method. The formation of ov in the Bi12 crystal lattice can favor the Fenton reaction not only by serving as a reaction site and increasing the charge density in the photocatalyst but also by partially reducing the dopant Cu2+ to Cu+, which consequently enhances the H2O2 activation to a significantly higher rate. Notably, Cu-doped Bi12O17Cl2 ov with an optimal dopant proportion of 4 % exhibited a preferable Fenton catalytic rate 4.5 times higher than pure photocatalytic degradation. This work investigates the mutual promotion of oxygen vacancies and dopant ions in the Fenton reaction and provides a novel development scheme for the advanced oxidation process.
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