Abstract
Zn2GeO4 and Zn2Ge1−x O4:xTi4+ powders were synthesized by high temperature solid-state reaction method. X-ray diffraction was used to characterize the structure. The photoluminescence and persistent luminescence properties of Zn2Ge1−x O4:xTi4+ phosphors were characterized by the excitation spectra, the emission spectra and the persistent decay curves. The results showed that the Ti4+ doping prolonged the persistent luminescence period of the Zn2GeO4 host. The thermoluminescence and absorption spectra indicated that a new defect band was formed by Ti4+ doping, which was ascribed to photoreduction of Ti4+ to Ti3+. The new defect band, which is located between the conduction band and valence band close to bottom of the conduction band, can capture the electrons to decay the electrons recombining with holes resulting in a prolonged persistent luminescence.
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