Abstract
We demonstrated vertical-structured InGaN/GaN multiple-quantum-well (MQW) solar cells with enhanced performances at a wavelength of 510 nm. The enhancement was achieved by using a ptype ohmic mirror with a combined indium-tin-oxide film and an aluminum (Al) reflector inserted beneath the MQW absorption region. In addition, both good ohmic contact and high reflection were observed. The vertical-structured MQW solar cell with an Al reflector exhibited significant improvements in device performances as compared to that without the Al reflector, including a 49% increase in the short-circuit current density and a 56% increase in the power conversion efficiency.
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