Abstract
A new epitaxial structure of AlGaInP-based light-emitting diode (LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide (ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer (CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
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