Abstract
The process development and optimization of p-type semiconductors and p-channel thin-film transistors (TFTs) are essential for the development of high-performance circuits. In this study, the Br-doped CuI (CuIBr) TFTs are proposed by the solution process to control copper vacancy generation and suppress excess holes formation in p-type CuI films and improve current modulation capabilities for CuI TFTs. The CuIBr films exhibit a uniform surface morphology and good crystalline quality. The on/off current (ION/IOFF) ratio of CuIBr TFTs increased from 103 to 106 with an increase in the Br doping ratio from 0 to 15%. Furthermore, the performance and operational stability of CuIBr TFTs are significantly enhanced by indium tin oxide (ITO) surface charge-transfer doping. The results obtained from the first-principles calculations well explain the electron-doping effect of ITO overlayer in CuIBr TFT. Eventually, the CuIBr TFT with 15% Br content exhibits a high ION/IOFF ratio of 3 × 106 and a high hole field-effect mobility (μFE) of 7.0 cm2 V-1 s-1. The band-like charge transport in CuIBr TFT is confirmed by the temperature-dependent measurement. This study paves the way for the realization of transparent complementary circuits and wearable electronics.
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