Abstract
In this work, a comparative analysis of vertical light-emitting diodes (VLEDs) examining the device properties is performed with different surface treatment schemes. The VLEDs on graphite substrate are fabricated by the laser lift-off and the wafer bonding processes. The significance of KrF laser irradiation to form protrusions on the surfaces of undoped gallium nitride (u-GaN) and n-GaN is analysed in detail. The light output power of the fabricated VLEDs is significantly increased through the formation of micro-sized protrusions by the laser irradiation. For VLED irradiated with an energy density of 600 mJ/cm2 on n-GaN surface with a thin u-GaN layer, the light output power is improved by 24.8% at 350 mA without degradation of electrical properties compared with that of the conventional VLED.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
