Abstract
Perovskite lighting-emitting diodes (PeLEDs) with inverted structure have been considered as promising display technology due to their suitable driving schemes with n-type thin-film transistors. However, the defects and imbalanced charge carriers in the CsPbBr 3 nanocrystal (NC) PeLED are key hurdles, limiting the performance. Herein, we have successfully doped Zn 2+ ions into CsPbBr 3 NCs by ligand-assisted reprecipitation method, exhibiting an 85% enhancement of the photoluminescence quantum yield (PLQY). In addition, the optimized energy level alignment via Zn doping facilitates the carrier balance in the devices, improving the efficiencies. The obtained CsPbBr 3 :Zn-based PeLED reaches a high luminance of 3124 cd/m 2 and a maximum external quantum efficiency (EQE) of 0.85%, which are superior to those of CsPbBr 3 -based PeLED (luminance = 564 cd/m 2 , EQE = 0.09%). The results demonstrate that Zn doping significantly enhances the performance of PeLED, which increases the potential of these inverted PeLEDs connected with n-type TFTs towards practical applications. • The Zn 2+ ion-doped CsPbBr 3 NCs was prepared by LARP method. • The defects were significantly passivated and PLQY had an ~85% enhancement. • More balanced charge carriers within the device was achieved. • 8.4-fold EQE improvement in inverted CsPbBr 3 :Zn-based LED was reached.
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